Role
Location: Zürich, Switzerland
Seniority: 7+ years (custom digital, analog, or memory), team leadership
Lead the development of high-performance, custom based digital compute or SRAM memory designs to power our compute-in-memory SRAM (ComputeRAM®). You will own architecture, circuit design, verification, and silicon correlation for advanced nodes down to 5 nm and below, and you will lead a small team of custom designers and layout engineers to predictable, production-grade outcomes. Expect hands-on work on bitcell-adjacent periphery, datapath interfaces, optimizing data movement, as well as tight collaboration with full-custom layout, digital, backend, DFT, and test.
What you’ll do
- Own the product roadmap: define specs, PPA targets, verification depth, and quality bars for new SRAM variants and CxR-adjacent custom blocks.
- Design & verify memory or datapath subsystems, including sense amps, data drivers, multipliers, adders, register files, timing/control FSMs, etc..
- Engineer for advanced nodes: close on variation (corners, Monte-Carlo), stability, noise/IR drop, device reliability, and wake-up/low-power behaviors in FinFET and FDSOI.
- Integrate for product: define clean digital boundaries (standard-cell and bus interfaces), latency/handshake contracts, and timing budgets so blocks drop into a digital-on-top mixed-signal flow.
- Silicon correlation: plan bring-up, build characterization benches, analyze ATE data, and publish correlation and errata with clear fixes.
- Redundancy & test: specify and validate redundancy/repair schemes; work with DFT (MBIST and Scan) test coverage; sign off on a production test plan.
- Partner with layout: co-plan floorplans, matching/guarding, shielding, and routing topologies; review extraction and fix EM/IR issues early.
- Elevate method & team: coach designers, run reviews, enforce checklists, and grow automation (Python/Tcl) for regressions, reporting, and collateral generation.
Outcomes (first 18 months)
- Tape-in and silicon of at least one production-grade CxR custom memory block meeting spec across PVT, with signed correlation and test reports.
- A reusable design kit (models, constraints, verification plans, char scripts, checklists) that shortens the following variant’s cycle time.
- A high-functioning custom team with clear ownership (periphery, timing/control, modeling, characterization) and reliable delivery metrics.
- Quantified PPA and yield gains from design or methodology improvements you led.
Requirements
- MS or PhD in Electrical/Computer Engineering (or similar) and 7+ years in custom digital, memory, or analog design.
- Track record of end-to-end ownership of production-grade functional blocks, including sign-off and silicon correlation.
- Deep understanding of high-performance and low-power circuit design on FinFET nodes (stability, variation, leakage, performance).
- Experience leading a small team (mentoring, reviews, planning) and coordinating tightly with layout, digital, backend, DFT, and test.
- Clear communication, structured documentation, and a quality-first mindset.
Nice to have
- Scripting for design and characterization automation (Python, Tcl) and model/report generation.
- Experience with memory compilers, characterization flows, and verification environments.
- DTCO/STCO exposure to align device, bitcell, and periphery choices with product goals.
- Background with production test strategies.
- Familiarity with compute-in-memory constraints and with integrating custom memory into large digital systems.
Apply
Send your CV and a short note (2–3 paragraphs on a design you owned, your toughest bug & how you solved it, an intro on what you like to do and how you see yourself as an engineer)
Interview flow (indicative)
- 30-min intro with HR (role/context)
- First Technical deep dive
- Second Technical Deep Dive
- (Optional) Third Technical Deep Dive
- Systems/product conversation with management
